APA (7th ed.) Citation

Shi, J., Wang, Y., Fei, X., Sun, B., Song, Y., Liu, Y., & Zhang, W. Simulation Study on Single-Event Burnout Reliability of 900V 4H-SiC Quasi Vertical Double Diffused MOSFET. IEEE.

Chicago Style (17th ed.) Citation

Shi, Jin-Ke, Ying Wang, Xin-Xing Fei, Biao Sun, Yan-Xing Song, Yu-Qian Liu, and Wei Zhang. Simulation Study on Single-Event Burnout Reliability of 900V 4H-SiC Quasi Vertical Double Diffused MOSFET. IEEE.

MLA (9th ed.) Citation

Shi, Jin-Ke, et al. Simulation Study on Single-Event Burnout Reliability of 900V 4H-SiC Quasi Vertical Double Diffused MOSFET. IEEE.