A New Drive Circuit Topology for GCT Turning-on

In order to meet the turning-on performance of higher power level GCT device, it introduced a new turning-on drive circuit topology for IGCT gate drive unit. Principle introduction, comparing analysis and model board testing have been made to show that this topology is superior to the original one,...

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Bibliographic Details
Main Authors: ZENG Hong, CHEN Xiulin, WANG Sanhu, ZHANG Shunbiao, WANG Fuguang, WANG Yujie
Format: Article
Language:zho
Published: Editorial Office of Control and Information Technology 2015-01-01
Series:Kongzhi Yu Xinxi Jishu
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Online Access:http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2015.06.005
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Summary:In order to meet the turning-on performance of higher power level GCT device, it introduced a new turning-on drive circuit topology for IGCT gate drive unit. Principle introduction, comparing analysis and model board testing have been made to show that this topology is superior to the original one, such as circuit structure, the number of controlling signals, preparation time of IGCT turning-on and the response speed of IGCT, which greatly improves the total performance of IGCT.
ISSN:2096-5427