Broadband Back-Short Transition From Waveguide to Thin Substrate-Integrated Waveguide in Multilayer Substrate in 270-GHz Band
A broadband right-angle transition from a rectangular waveguide (RWG) to a substrate-integrated waveguide (SIW) with a small narrow-wall width is proposed in the 270 GHz band. Generally, it is difficult to design a broadband transition from a standard RWG to an SIW with a small narrow-wall width owi...
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| Format: | Article |
| Language: | English |
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IEEE
2025-01-01
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| Series: | IEEE Journal of Microwaves |
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| Online Access: | https://ieeexplore.ieee.org/document/10746389/ |
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| author | Shumpei Kishi Yoshiki Sugimoto Kunio Sakakibara Nobuyoshi Kikuma |
| author_facet | Shumpei Kishi Yoshiki Sugimoto Kunio Sakakibara Nobuyoshi Kikuma |
| author_sort | Shumpei Kishi |
| collection | DOAJ |
| description | A broadband right-angle transition from a rectangular waveguide (RWG) to a substrate-integrated waveguide (SIW) with a small narrow-wall width is proposed in the 270 GHz band. Generally, it is difficult to design a broadband transition from a standard RWG to an SIW with a small narrow-wall width owing to the small characteristic impedance of the SIW. In this study, wideband characteristics are obtained by placing via holes in a multilayer substrate and forming back-short structures, short stubs, and inductive pins. By varying the positions of the via holes, the two resonant frequencies are independently controlled to achieve a broad bandwidth exceeding 26%. To verify this design, back-to-back DUTs (devices under test) were fabricated and measured in the sub-terahertz band. The measured and simulated results are in good agreement. The measured insertion loss is approximately 1.1 dB at a design frequency of 275 GHz, and the measured reflection loss is less than −10 dB from 234 GHz to 308 GHz. |
| format | Article |
| id | doaj-art-0f11e55f220e4498a0d439e4f436dc96 |
| institution | Kabale University |
| issn | 2692-8388 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of Microwaves |
| spelling | doaj-art-0f11e55f220e4498a0d439e4f436dc962025-01-15T00:04:11ZengIEEEIEEE Journal of Microwaves2692-83882025-01-015118018910.1109/JMW.2024.348162910746389Broadband Back-Short Transition From Waveguide to Thin Substrate-Integrated Waveguide in Multilayer Substrate in 270-GHz BandShumpei Kishi0Yoshiki Sugimoto1https://orcid.org/0000-0002-3906-3207Kunio Sakakibara2https://orcid.org/0000-0003-1106-0378Nobuyoshi Kikuma3https://orcid.org/0000-0002-9759-8760Department of Electrical and Mechanical Engineering, Nagoya Institute of Technology, Nagoya, Aichi, JapanDepartment of Electrical and Mechanical Engineering, Nagoya Institute of Technology, Nagoya, Aichi, JapanDepartment of Electrical and Mechanical Engineering, Nagoya Institute of Technology, Nagoya, Aichi, JapanDepartment of Electrical and Mechanical Engineering, Nagoya Institute of Technology, Nagoya, Aichi, JapanA broadband right-angle transition from a rectangular waveguide (RWG) to a substrate-integrated waveguide (SIW) with a small narrow-wall width is proposed in the 270 GHz band. Generally, it is difficult to design a broadband transition from a standard RWG to an SIW with a small narrow-wall width owing to the small characteristic impedance of the SIW. In this study, wideband characteristics are obtained by placing via holes in a multilayer substrate and forming back-short structures, short stubs, and inductive pins. By varying the positions of the via holes, the two resonant frequencies are independently controlled to achieve a broad bandwidth exceeding 26%. To verify this design, back-to-back DUTs (devices under test) were fabricated and measured in the sub-terahertz band. The measured and simulated results are in good agreement. The measured insertion loss is approximately 1.1 dB at a design frequency of 275 GHz, and the measured reflection loss is less than −10 dB from 234 GHz to 308 GHz.https://ieeexplore.ieee.org/document/10746389/Waveguide transitionssubstrate-integrated waveguides (SIW)millimeter wavesub-terahertz wavetransmission lines |
| spellingShingle | Shumpei Kishi Yoshiki Sugimoto Kunio Sakakibara Nobuyoshi Kikuma Broadband Back-Short Transition From Waveguide to Thin Substrate-Integrated Waveguide in Multilayer Substrate in 270-GHz Band IEEE Journal of Microwaves Waveguide transitions substrate-integrated waveguides (SIW) millimeter wave sub-terahertz wave transmission lines |
| title | Broadband Back-Short Transition From Waveguide to Thin Substrate-Integrated Waveguide in Multilayer Substrate in 270-GHz Band |
| title_full | Broadband Back-Short Transition From Waveguide to Thin Substrate-Integrated Waveguide in Multilayer Substrate in 270-GHz Band |
| title_fullStr | Broadband Back-Short Transition From Waveguide to Thin Substrate-Integrated Waveguide in Multilayer Substrate in 270-GHz Band |
| title_full_unstemmed | Broadband Back-Short Transition From Waveguide to Thin Substrate-Integrated Waveguide in Multilayer Substrate in 270-GHz Band |
| title_short | Broadband Back-Short Transition From Waveguide to Thin Substrate-Integrated Waveguide in Multilayer Substrate in 270-GHz Band |
| title_sort | broadband back short transition from waveguide to thin substrate integrated waveguide in multilayer substrate in 270 ghz band |
| topic | Waveguide transitions substrate-integrated waveguides (SIW) millimeter wave sub-terahertz wave transmission lines |
| url | https://ieeexplore.ieee.org/document/10746389/ |
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