Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies

Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies

Abstract Gallium oxide (Ga2O3) is an emerging ultra‐wide bandgap (UWBG) semiconductor material that has gained significant attention in the field of high voltage and high frequency power electronics. Its noteworthy attributes include a large bandgap (Eg) of 4.8 eV, high theoretical critical breakdow...

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Bibliographic Details
Main Authors: Sihan Sun, Chenlu Wang, Sami Alghamdi, Hong Zhou, Yue Hao, Jincheng Zhang
Format: Article
Language:English
Published: Wiley-VCH 2025-01-01
Series:Advanced Electronic Materials
Subjects:
diodes
epitaxial
FETs
Ga2O3
PFOM
RF
Online Access:https://doi.org/10.1002/aelm.202300844
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