Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies
Abstract Gallium oxide (Ga2O3) is an emerging ultra‐wide bandgap (UWBG) semiconductor material that has gained significant attention in the field of high voltage and high frequency power electronics. Its noteworthy attributes include a large bandgap (Eg) of 4.8 eV, high theoretical critical breakdow...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-01-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202300844 |
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| author | Sihan Sun Chenlu Wang Sami Alghamdi Hong Zhou Yue Hao Jincheng Zhang |
| author_facet | Sihan Sun Chenlu Wang Sami Alghamdi Hong Zhou Yue Hao Jincheng Zhang |
| author_sort | Sihan Sun |
| collection | DOAJ |
| description | Abstract Gallium oxide (Ga2O3) is an emerging ultra‐wide bandgap (UWBG) semiconductor material that has gained significant attention in the field of high voltage and high frequency power electronics. Its noteworthy attributes include a large bandgap (Eg) of 4.8 eV, high theoretical critical breakdown field strength (EC) of 8 MV cm−1, and saturation velocity (νs) of 2 × 107 cm s−1, as well as high Baliga figures of merit (BFOM) of 3000. In addition, Ga2O3 has the advantages of large‐size substrates that can be achieved by low‐cost melt‐grown techniques. This review provides a partial overview of pivotal milestones and recent advancements in the Ga2O3 material growth and device performance. It begins with a discussion of the fundamental material properties of Ga2O3, followed by a description of substrate growth and epitaxial techniques for Ga2O3. Subsequently, the contact technologies between Ga2O3 and other materials are fully elucidated. Moreover, this article also culminates with a detailed analysis of Ga2O3‐based high voltage and high frequency power devices. Some challenges and solutions, such as the lack of p‐type doping, low thermal conductivity, and low mobility are also presented and investigated in this review. |
| format | Article |
| id | doaj-art-0df14cb41c8a47ef879bc3075194ab51 |
| institution | Kabale University |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-0df14cb41c8a47ef879bc3075194ab512025-01-10T13:40:16ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-01-01111n/an/a10.1002/aelm.202300844Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device TechnologiesSihan Sun0Chenlu Wang1Sami Alghamdi2Hong Zhou3Yue Hao4Jincheng Zhang5National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics Xidian University Xi'an 710071 ChinaNational Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics Xidian University Xi'an 710071 ChinaDepartment of Electrical and Computer EngineeringKing Abdulaziz UniversityJeddah 21589 Saudi ArabiaNational Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics Xidian University Xi'an 710071 ChinaNational Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics Xidian University Xi'an 710071 ChinaNational Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics Xidian University Xi'an 710071 ChinaAbstract Gallium oxide (Ga2O3) is an emerging ultra‐wide bandgap (UWBG) semiconductor material that has gained significant attention in the field of high voltage and high frequency power electronics. Its noteworthy attributes include a large bandgap (Eg) of 4.8 eV, high theoretical critical breakdown field strength (EC) of 8 MV cm−1, and saturation velocity (νs) of 2 × 107 cm s−1, as well as high Baliga figures of merit (BFOM) of 3000. In addition, Ga2O3 has the advantages of large‐size substrates that can be achieved by low‐cost melt‐grown techniques. This review provides a partial overview of pivotal milestones and recent advancements in the Ga2O3 material growth and device performance. It begins with a discussion of the fundamental material properties of Ga2O3, followed by a description of substrate growth and epitaxial techniques for Ga2O3. Subsequently, the contact technologies between Ga2O3 and other materials are fully elucidated. Moreover, this article also culminates with a detailed analysis of Ga2O3‐based high voltage and high frequency power devices. Some challenges and solutions, such as the lack of p‐type doping, low thermal conductivity, and low mobility are also presented and investigated in this review.https://doi.org/10.1002/aelm.202300844diodesepitaxialFETsGa2O3PFOMRF |
| spellingShingle | Sihan Sun Chenlu Wang Sami Alghamdi Hong Zhou Yue Hao Jincheng Zhang Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies Advanced Electronic Materials diodes epitaxial FETs Ga2O3 PFOM RF |
| title | Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies |
| title_full | Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies |
| title_fullStr | Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies |
| title_full_unstemmed | Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies |
| title_short | Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies |
| title_sort | recent advanced ultra wide bandgap β ga2o3 material and device technologies |
| topic | diodes epitaxial FETs Ga2O3 PFOM RF |
| url | https://doi.org/10.1002/aelm.202300844 |
| work_keys_str_mv | AT sihansun recentadvancedultrawidebandgapbga2o3materialanddevicetechnologies AT chenluwang recentadvancedultrawidebandgapbga2o3materialanddevicetechnologies AT samialghamdi recentadvancedultrawidebandgapbga2o3materialanddevicetechnologies AT hongzhou recentadvancedultrawidebandgapbga2o3materialanddevicetechnologies AT yuehao recentadvancedultrawidebandgapbga2o3materialanddevicetechnologies AT jinchengzhang recentadvancedultrawidebandgapbga2o3materialanddevicetechnologies |