High Linearity and Symmetry Ferroelectric Artificial Neuromorphic Devices Based on Ultrathin Indium‐Tin‐Oxide Channels
Abstract Because of the limitations of the von Neumann structure and transistor size scaling, it is important to find new materials to build ultra‐thin artificial synapse devices. Doped In2O3 has attracted a lot of research due to its excellent on/off ratio, high mobility, and large on‐state current...
Saved in:
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-08-01
|
| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202500078 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|