APA (7th ed.) Citation

Wang, S., Hu, X., Qian, B., Yu, J., Li, Z., Sun, Q., . . . Chen, L. High Linearity and Symmetry Ferroelectric Artificial Neuromorphic Devices Based on Ultrathin Indium‐Tin‐Oxide Channels. Wiley-VCH.

Chicago Style (17th ed.) Citation

Wang, Siwei, Xuemeng Hu, Baifan Qian, Jiajie Yu, Zhenhai Li, Qingqing Sun, David Wei Zhang, Qingxuan Li, and Lin Chen. High Linearity and Symmetry Ferroelectric Artificial Neuromorphic Devices Based on Ultrathin Indium‐Tin‐Oxide Channels. Wiley-VCH.

MLA (9th ed.) Citation

Wang, Siwei, et al. High Linearity and Symmetry Ferroelectric Artificial Neuromorphic Devices Based on Ultrathin Indium‐Tin‐Oxide Channels. Wiley-VCH.