Controlled Formation of Silicon-Vacancy Centers in High-Pressure Nanodiamonds Produced from an “Adamantane + Detonation Nanodiamond” Mixture
Despite progress in the high-pressure synthesis of nanodiamonds from hydrocarbons, the problem of controlled formation of fluorescent impurity centers in them still remains unresolved. In our work, we explore the potential of a new precursor composition, a mixture of adamantane with detonation nanod...
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MDPI AG
2024-11-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/14/22/1843 |
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| author | Dmitrii G. Pasternak Rustem H. Bagramov Alexey M. Romshin Igor P. Zibrov Vladimir P. Filonenko Igor I. Vlasov |
| author_facet | Dmitrii G. Pasternak Rustem H. Bagramov Alexey M. Romshin Igor P. Zibrov Vladimir P. Filonenko Igor I. Vlasov |
| author_sort | Dmitrii G. Pasternak |
| collection | DOAJ |
| description | Despite progress in the high-pressure synthesis of nanodiamonds from hydrocarbons, the problem of controlled formation of fluorescent impurity centers in them still remains unresolved. In our work, we explore the potential of a new precursor composition, a mixture of adamantane with detonation nanodiamond, both in the synthesis of nanodiamonds and in the controlled formation of negatively charged silicon-vacancy centers in such nanodiamonds. Using different adamantane/detonation nanodiamond weight ratios, a series of samples was synthesized at a pressure of 7.5 GPa in the temperature range of 1200–1500 °C. It was found that temperature around 1350 °C, is optimal for the high-yield synthesis of nanodiamonds <50 nm in size. For the first time, controlled formation of negatively charged silicon-vacancy centers in such small nanodiamonds was demonstrated by varying the atomic ratios of silicon/carbon in the precursor in the range of 0.01–1%. |
| format | Article |
| id | doaj-art-0b848839d834421ca87a4fd2dacd6a8e |
| institution | Kabale University |
| issn | 2079-4991 |
| language | English |
| publishDate | 2024-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj-art-0b848839d834421ca87a4fd2dacd6a8e2024-11-26T18:16:34ZengMDPI AGNanomaterials2079-49912024-11-011422184310.3390/nano14221843Controlled Formation of Silicon-Vacancy Centers in High-Pressure Nanodiamonds Produced from an “Adamantane + Detonation Nanodiamond” MixtureDmitrii G. Pasternak0Rustem H. Bagramov1Alexey M. Romshin2Igor P. Zibrov3Vladimir P. Filonenko4Igor I. Vlasov5Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Str., Moscow 119991, RussiaVereshchagin Institute of High-Pressure Physics of the Russian Academy of Sciences, 14 Kaluzhskoe Shosse, Troitsk, Moscow 108840, RussiaProkhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Str., Moscow 119991, RussiaVereshchagin Institute of High-Pressure Physics of the Russian Academy of Sciences, 14 Kaluzhskoe Shosse, Troitsk, Moscow 108840, RussiaVereshchagin Institute of High-Pressure Physics of the Russian Academy of Sciences, 14 Kaluzhskoe Shosse, Troitsk, Moscow 108840, RussiaProkhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Str., Moscow 119991, RussiaDespite progress in the high-pressure synthesis of nanodiamonds from hydrocarbons, the problem of controlled formation of fluorescent impurity centers in them still remains unresolved. In our work, we explore the potential of a new precursor composition, a mixture of adamantane with detonation nanodiamond, both in the synthesis of nanodiamonds and in the controlled formation of negatively charged silicon-vacancy centers in such nanodiamonds. Using different adamantane/detonation nanodiamond weight ratios, a series of samples was synthesized at a pressure of 7.5 GPa in the temperature range of 1200–1500 °C. It was found that temperature around 1350 °C, is optimal for the high-yield synthesis of nanodiamonds <50 nm in size. For the first time, controlled formation of negatively charged silicon-vacancy centers in such small nanodiamonds was demonstrated by varying the atomic ratios of silicon/carbon in the precursor in the range of 0.01–1%.https://www.mdpi.com/2079-4991/14/22/1843nanodiamondhigh-pressure synthesissilicon-vacancy centerfluorescenceadamantane |
| spellingShingle | Dmitrii G. Pasternak Rustem H. Bagramov Alexey M. Romshin Igor P. Zibrov Vladimir P. Filonenko Igor I. Vlasov Controlled Formation of Silicon-Vacancy Centers in High-Pressure Nanodiamonds Produced from an “Adamantane + Detonation Nanodiamond” Mixture Nanomaterials nanodiamond high-pressure synthesis silicon-vacancy center fluorescence adamantane |
| title | Controlled Formation of Silicon-Vacancy Centers in High-Pressure Nanodiamonds Produced from an “Adamantane + Detonation Nanodiamond” Mixture |
| title_full | Controlled Formation of Silicon-Vacancy Centers in High-Pressure Nanodiamonds Produced from an “Adamantane + Detonation Nanodiamond” Mixture |
| title_fullStr | Controlled Formation of Silicon-Vacancy Centers in High-Pressure Nanodiamonds Produced from an “Adamantane + Detonation Nanodiamond” Mixture |
| title_full_unstemmed | Controlled Formation of Silicon-Vacancy Centers in High-Pressure Nanodiamonds Produced from an “Adamantane + Detonation Nanodiamond” Mixture |
| title_short | Controlled Formation of Silicon-Vacancy Centers in High-Pressure Nanodiamonds Produced from an “Adamantane + Detonation Nanodiamond” Mixture |
| title_sort | controlled formation of silicon vacancy centers in high pressure nanodiamonds produced from an adamantane detonation nanodiamond mixture |
| topic | nanodiamond high-pressure synthesis silicon-vacancy center fluorescence adamantane |
| url | https://www.mdpi.com/2079-4991/14/22/1843 |
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