Gan Photonic Crystals: Spectral Dynamics in UV, X‐Ray, and Alpha Radiation
In this work, a comparative analysis of gallium nitride (GaN) thin films is conducted, both with and without photonic crystal (PhC) structures, focusing on their scintillation and photoluminescence properties. GaN's suitability for diverse optoelectronic and radiation detection applications is...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-01-01
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| Series: | Advanced Photonics Research |
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| Online Access: | https://doi.org/10.1002/adpr.202400075 |
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| author | Firat Yasar Noriaki Kawaguchi Takayuki Yanagida Isabel Harrysson Rodrigues Yleana Evelyn Ceballos Roberto Prado‐Rivera Sam Keo |
| author_facet | Firat Yasar Noriaki Kawaguchi Takayuki Yanagida Isabel Harrysson Rodrigues Yleana Evelyn Ceballos Roberto Prado‐Rivera Sam Keo |
| author_sort | Firat Yasar |
| collection | DOAJ |
| description | In this work, a comparative analysis of gallium nitride (GaN) thin films is conducted, both with and without photonic crystal (PhC) structures, focusing on their scintillation and photoluminescence properties. GaN's suitability for diverse optoelectronic and radiation detection applications is analyzed, and this study examines how PhC implementation can enhance these properties. Methodologically, the emission spectra is analyzed from 5.9 keV X‐ray sources, decay curves, pulse height spectra in response to 241Am 5.5 MeV alpha‐rays, and photoluminescence spectra induced by UV excitation. The findings demonstrate a substantial increase in quantum efficiency for PhC GaN, nearly tripling the light yield that of conventional plain GaN thin films under the UV excitation. The enhancement is predominantly attributed to the PhC GaN's proficiency in guiding light at 550 nm, a feature indicative of its spectral filtering capabilities, as detailed in the study. Furthermore, side‐band scintillations, stemming from inherent materials like Chromium that generate scintillations at diverse wavelengths, are effectively mitigated. A key finding of this study is the effective detection of light not only at the rear but also along the lateral sides of the films, offering new possibilities for radiation detector design and architecture. |
| format | Article |
| id | doaj-art-0aff6c33cb974ad4aa5ea93ab890db2c |
| institution | Kabale University |
| issn | 2699-9293 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Photonics Research |
| spelling | doaj-art-0aff6c33cb974ad4aa5ea93ab890db2c2025-01-06T02:15:53ZengWiley-VCHAdvanced Photonics Research2699-92932025-01-0161n/an/a10.1002/adpr.202400075Gan Photonic Crystals: Spectral Dynamics in UV, X‐Ray, and Alpha RadiationFirat Yasar0Noriaki Kawaguchi1Takayuki Yanagida2Isabel Harrysson Rodrigues3Yleana Evelyn Ceballos4Roberto Prado‐Rivera5Sam Keo6NASA Jet Propulsion Laboratory California Institute of Technology Pasadena 91109 CA USADivision of Materials Science Nara Institute of Science and Technology (NAIST) 8916‐5 Takayama Ikoma Nara 630‐0192 JapanDivision of Materials Science Nara Institute of Science and Technology (NAIST) 8916‐5 Takayama Ikoma Nara 630‐0192 JapanNASA Jet Propulsion Laboratory California Institute of Technology Pasadena 91109 CA USADepartment of Mechanical and Materials Engineering Florida International University Miami 33199 FL USADepartment of Mechanical and Materials Engineering Florida International University Miami 33199 FL USADivision of Materials Science Nara Institute of Science and Technology (NAIST) 8916‐5 Takayama Ikoma Nara 630‐0192 JapanIn this work, a comparative analysis of gallium nitride (GaN) thin films is conducted, both with and without photonic crystal (PhC) structures, focusing on their scintillation and photoluminescence properties. GaN's suitability for diverse optoelectronic and radiation detection applications is analyzed, and this study examines how PhC implementation can enhance these properties. Methodologically, the emission spectra is analyzed from 5.9 keV X‐ray sources, decay curves, pulse height spectra in response to 241Am 5.5 MeV alpha‐rays, and photoluminescence spectra induced by UV excitation. The findings demonstrate a substantial increase in quantum efficiency for PhC GaN, nearly tripling the light yield that of conventional plain GaN thin films under the UV excitation. The enhancement is predominantly attributed to the PhC GaN's proficiency in guiding light at 550 nm, a feature indicative of its spectral filtering capabilities, as detailed in the study. Furthermore, side‐band scintillations, stemming from inherent materials like Chromium that generate scintillations at diverse wavelengths, are effectively mitigated. A key finding of this study is the effective detection of light not only at the rear but also along the lateral sides of the films, offering new possibilities for radiation detector design and architecture.https://doi.org/10.1002/adpr.202400075gallium nitridenon‐linear opticsphotonic crystalradiation interactionscintillatorsself‐collimation |
| spellingShingle | Firat Yasar Noriaki Kawaguchi Takayuki Yanagida Isabel Harrysson Rodrigues Yleana Evelyn Ceballos Roberto Prado‐Rivera Sam Keo Gan Photonic Crystals: Spectral Dynamics in UV, X‐Ray, and Alpha Radiation Advanced Photonics Research gallium nitride non‐linear optics photonic crystal radiation interaction scintillators self‐collimation |
| title | Gan Photonic Crystals: Spectral Dynamics in UV, X‐Ray, and Alpha Radiation |
| title_full | Gan Photonic Crystals: Spectral Dynamics in UV, X‐Ray, and Alpha Radiation |
| title_fullStr | Gan Photonic Crystals: Spectral Dynamics in UV, X‐Ray, and Alpha Radiation |
| title_full_unstemmed | Gan Photonic Crystals: Spectral Dynamics in UV, X‐Ray, and Alpha Radiation |
| title_short | Gan Photonic Crystals: Spectral Dynamics in UV, X‐Ray, and Alpha Radiation |
| title_sort | gan photonic crystals spectral dynamics in uv x ray and alpha radiation |
| topic | gallium nitride non‐linear optics photonic crystal radiation interaction scintillators self‐collimation |
| url | https://doi.org/10.1002/adpr.202400075 |
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