Cryogenic III-V and Nb electronics integrated on silicon for large-scale quantum computing platforms
Abstract Quantum computers now encounter the significant challenge of scalability, similar to the issue that classical computing faced previously. Recent results in high-fidelity spin qubits manufactured with a Si CMOS technology, along with demonstrations that cryogenic CMOS-based control/readout e...
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| Main Authors: | , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2024-12-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-024-55077-1 |
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| Summary: | Abstract Quantum computers now encounter the significant challenge of scalability, similar to the issue that classical computing faced previously. Recent results in high-fidelity spin qubits manufactured with a Si CMOS technology, along with demonstrations that cryogenic CMOS-based control/readout electronics can be integrated into the same chip or die, opens up an opportunity to break out the challenges of qubit size, I/O, and integrability. However, the power consumption of cryogenic CMOS-based control/readout electronics cannot support thousands or millions of qubits. Here, we show that III–V two-dimensional electron gas and Nb superconductor-based cryogenic electronics can be integrated with Si and operate at extremely low power levels, enabling the control and readout for millions of qubits. Our devices offer a unity gain cutoff frequency of 601 GHz, a unity power gain cutoff frequency of 593 GHz, and a low noise indication factor $$\left(\sqrt{{I}_{{{\rm{D}}}}}\, {g}_{{{{\rm{m}}}}}^{-1}\right)$$ I D g m − 1 of $$0.21\sqrt{{{{\rm{Vmm}}}}}\scriptstyle\sqrt{{S}^{-1}}$$ 0.21 Vmm S − 1 at 4 K using more than 10 times less power consumption than CMOS. |
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| ISSN: | 2041-1723 |