Ionization annealing of semiconductor crystals. Part two: the experiment
There is a conception that irradiation of semiconductor crystals with high energy electrons (300 keV) results in a significant and irreversible deterioration of their electrical, optical and structural properties. Semiconductors are typically irradiated by low voltage electron accelerators with a co...
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| Main Authors: | A. S. Garkavenko, V. A. Mokritskii, O. V. Banzak, V. A. Zavadskii |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2014-12-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | https://tkea.com.ua/index.php/journal/article/view/303 |
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