Physicochemical conditions for the stability of manganese-doped nanolayers of gallium arsenide and its iso-electronic analogues
In this paper research of stability of nanolayers of manganese doped materials of AIIIBV and AIIBIVСV2 types holding much promise as spintronic semiconductor compounds is described. The method of non-local density functional has been applied to calculate bonding energies {εij (r)} in atomic pairs fo...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Uralʹskij federalʹnyj universitet imeni pervogo Prezidenta Rossii B.N. Elʹcina
2015-03-01
|
| Series: | Chimica Techno Acta |
| Subjects: | |
| Online Access: | https://chimicatechnoacta.ru/article/view/1099 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1846109619597869056 |
|---|---|
| author | Yu. V. Terenteva L. V. Fomina S. A. Beznosyuk |
| author_facet | Yu. V. Terenteva L. V. Fomina S. A. Beznosyuk |
| author_sort | Yu. V. Terenteva |
| collection | DOAJ |
| description | In this paper research of stability of nanolayers of manganese doped materials of AIIIBV and AIIBIVСV2 types holding much promise as spintronic semiconductor compounds is described. The method of non-local density functional has been applied to calculate bonding energies {εij (r)} in atomic pairs for structures of AIIIBV and AIIBIVСV2 types and for MnAs. According to the calculations of internal energy, entropy and free energy of Helmholtz (Т = 298К), in the context of used models, addition of manganese to the arsenide’s AIIIBV and AIIBIVСV2 nanolayers affects its stability in different ways depending on its morphology and substitution mode. However, a critical instability in nanofilm leading to the tendency of growing of a new phase germ may be formed under any manganese concentrations. This leads to deterioration of electrophysical parameters of magnetic semiconductor compounds that is agreed with experimental data. |
| format | Article |
| id | doaj-art-07b3de50c98c46648b4b20ef1c812d24 |
| institution | Kabale University |
| issn | 2411-1414 |
| language | English |
| publishDate | 2015-03-01 |
| publisher | Uralʹskij federalʹnyj universitet imeni pervogo Prezidenta Rossii B.N. Elʹcina |
| record_format | Article |
| series | Chimica Techno Acta |
| spelling | doaj-art-07b3de50c98c46648b4b20ef1c812d242024-12-25T09:36:54ZengUralʹskij federalʹnyj universitet imeni pervogo Prezidenta Rossii B.N. ElʹcinaChimica Techno Acta2411-14142015-03-0121667710.15826/chimtech.2015.2.1.0071217Physicochemical conditions for the stability of manganese-doped nanolayers of gallium arsenide and its iso-electronic analoguesYu. V. Terenteva0L. V. Fomina1S. A. Beznosyuk2Алтайский государственный университет, БарнаулАнгарская государственная технологическая академия, АнгарскАлтайский государственный университет, БарнаулIn this paper research of stability of nanolayers of manganese doped materials of AIIIBV and AIIBIVСV2 types holding much promise as spintronic semiconductor compounds is described. The method of non-local density functional has been applied to calculate bonding energies {εij (r)} in atomic pairs for structures of AIIIBV and AIIBIVСV2 types and for MnAs. According to the calculations of internal energy, entropy and free energy of Helmholtz (Т = 298К), in the context of used models, addition of manganese to the arsenide’s AIIIBV and AIIBIVСV2 nanolayers affects its stability in different ways depending on its morphology and substitution mode. However, a critical instability in nanofilm leading to the tendency of growing of a new phase germ may be formed under any manganese concentrations. This leads to deterioration of electrophysical parameters of magnetic semiconductor compounds that is agreed with experimental data.https://chimicatechnoacta.ru/article/view/1099нанослоиполупроводниковые соединениямарганецарсениды галлияметод нелокального функционала плотности |
| spellingShingle | Yu. V. Terenteva L. V. Fomina S. A. Beznosyuk Physicochemical conditions for the stability of manganese-doped nanolayers of gallium arsenide and its iso-electronic analogues Chimica Techno Acta нанослои полупроводниковые соединения марганец арсениды галлия метод нелокального функционала плотности |
| title | Physicochemical conditions for the stability of manganese-doped nanolayers of gallium arsenide and its iso-electronic analogues |
| title_full | Physicochemical conditions for the stability of manganese-doped nanolayers of gallium arsenide and its iso-electronic analogues |
| title_fullStr | Physicochemical conditions for the stability of manganese-doped nanolayers of gallium arsenide and its iso-electronic analogues |
| title_full_unstemmed | Physicochemical conditions for the stability of manganese-doped nanolayers of gallium arsenide and its iso-electronic analogues |
| title_short | Physicochemical conditions for the stability of manganese-doped nanolayers of gallium arsenide and its iso-electronic analogues |
| title_sort | physicochemical conditions for the stability of manganese doped nanolayers of gallium arsenide and its iso electronic analogues |
| topic | нанослои полупроводниковые соединения марганец арсениды галлия метод нелокального функционала плотности |
| url | https://chimicatechnoacta.ru/article/view/1099 |
| work_keys_str_mv | AT yuvterenteva physicochemicalconditionsforthestabilityofmanganesedopednanolayersofgalliumarsenideanditsisoelectronicanalogues AT lvfomina physicochemicalconditionsforthestabilityofmanganesedopednanolayersofgalliumarsenideanditsisoelectronicanalogues AT sabeznosyuk physicochemicalconditionsforthestabilityofmanganesedopednanolayersofgalliumarsenideanditsisoelectronicanalogues |