Harnessing orbital Hall effect in spin-orbit torque MRAM

Harnessing orbital Hall effect in spin-orbit torque MRAM

Abstract Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient magnetization switching, long data retention, and high-densi...

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Bibliographic Details
Main Authors: Rahul Gupta, Chloé Bouard, Fabian Kammerbauer, J. Omar Ledesma-Martin, Arnab Bose, Iryna Kononenko, Sylvain Martin, Perrine Usé, Gerhard Jakob, Marc Drouard, Mathias Kläui
Format: Article
Language:English
Published: Nature Portfolio 2025-01-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-024-55437-x
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