Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility
Abstract Ultrawide bandgap (UWBG) semiconductors offer new possibilities to develop power electronics. High voltage operation for the off‐state as well as high temperature stability of the devices in on‐state are required. More than AlGaN/GaN heterostructures, AlGaN/AlGaN heterostructures are promis...
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| Format: | Article |
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Wiley-VCH
2025-01-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400069 |
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| author | Julien Bassaler Jash Mehta Idriss Abid Leszek Konczewicz Sandrine Juillaguet Sylvie Contreras Stéphanie Rennesson Sebastian Tamariz Maud Nemoz Fabrice Semond Julien Pernot Farid Medjdoub Yvon Cordier Philippe Ferrandis |
| author_facet | Julien Bassaler Jash Mehta Idriss Abid Leszek Konczewicz Sandrine Juillaguet Sylvie Contreras Stéphanie Rennesson Sebastian Tamariz Maud Nemoz Fabrice Semond Julien Pernot Farid Medjdoub Yvon Cordier Philippe Ferrandis |
| author_sort | Julien Bassaler |
| collection | DOAJ |
| description | Abstract Ultrawide bandgap (UWBG) semiconductors offer new possibilities to develop power electronics. High voltage operation for the off‐state as well as high temperature stability of the devices in on‐state are required. More than AlGaN/GaN heterostructures, AlGaN/AlGaN heterostructures are promising candidates to meet these criteria. Furthermore, the possibility to choose the Al molar fraction of AlGaN paves the way to more tunable heterostructures. In this study, the electronic transport properties of AlGaN channel heterostructures grown on silicon substrates with various aluminum contents, focusing on the temperature dependence of the electron mobility, is investigated. Experimental results from Hall effect measurements are confronted with carrier scattering models and deep level transient spectroscopy analysis to quantify limiting effects. These results demonstrated the significant potential of Al‐rich AlGaN channel heterostructures grown on silicon substrates for high power and high temperature applications. |
| format | Article |
| id | doaj-art-05fe477d4efa47859632af7035e90858 |
| institution | Kabale University |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-05fe477d4efa47859632af7035e908582025-01-10T13:40:16ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-01-01111n/an/a10.1002/aelm.202400069Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron MobilityJulien Bassaler0Jash Mehta1Idriss Abid2Leszek Konczewicz3Sandrine Juillaguet4Sylvie Contreras5Stéphanie Rennesson6Sebastian Tamariz7Maud Nemoz8Fabrice Semond9Julien Pernot10Farid Medjdoub11Yvon Cordier12Philippe Ferrandis13Univ. Grenoble Alpes CNRS Grenoble INP Institut Néel Grenoble 38000 FranceIEMN CNRS Université de Lille Villeneuve d'Ascq 59650 FranceIEMN CNRS Université de Lille Villeneuve d'Ascq 59650 FranceLaboratoire Charles Coulomb Univ Montpellier CNRS UMR 221 Montpellier 34095 FranceLaboratoire Charles Coulomb Univ Montpellier CNRS UMR 221 Montpellier 34095 FranceLaboratoire Charles Coulomb Univ Montpellier CNRS UMR 221 Montpellier 34095 FranceEasyGAN SAS Rue Bernard Grégory Sophia Antipolis Cedex 06905 FranceUniversité Côte d'Azur CNRS CRHEA rue Bernard Grégory Valbonne 06560 FranceUniversité Côte d'Azur CNRS CRHEA rue Bernard Grégory Valbonne 06560 FranceUniversité Côte d'Azur CNRS CRHEA rue Bernard Grégory Valbonne 06560 FranceUniv. Grenoble Alpes CNRS Grenoble INP Institut Néel Grenoble 38000 FranceIEMN CNRS Université de Lille Villeneuve d'Ascq 59650 FranceUniversité Côte d'Azur CNRS CRHEA rue Bernard Grégory Valbonne 06560 FranceUniv. Grenoble Alpes CNRS Grenoble INP Institut Néel Grenoble 38000 FranceAbstract Ultrawide bandgap (UWBG) semiconductors offer new possibilities to develop power electronics. High voltage operation for the off‐state as well as high temperature stability of the devices in on‐state are required. More than AlGaN/GaN heterostructures, AlGaN/AlGaN heterostructures are promising candidates to meet these criteria. Furthermore, the possibility to choose the Al molar fraction of AlGaN paves the way to more tunable heterostructures. In this study, the electronic transport properties of AlGaN channel heterostructures grown on silicon substrates with various aluminum contents, focusing on the temperature dependence of the electron mobility, is investigated. Experimental results from Hall effect measurements are confronted with carrier scattering models and deep level transient spectroscopy analysis to quantify limiting effects. These results demonstrated the significant potential of Al‐rich AlGaN channel heterostructures grown on silicon substrates for high power and high temperature applications.https://doi.org/10.1002/aelm.202400069AlGaN channel high electron mobility transistorelectron mobilitysilicon substratetemperature operationultrawide bandgap |
| spellingShingle | Julien Bassaler Jash Mehta Idriss Abid Leszek Konczewicz Sandrine Juillaguet Sylvie Contreras Stéphanie Rennesson Sebastian Tamariz Maud Nemoz Fabrice Semond Julien Pernot Farid Medjdoub Yvon Cordier Philippe Ferrandis Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility Advanced Electronic Materials AlGaN channel high electron mobility transistor electron mobility silicon substrate temperature operation ultrawide bandgap |
| title | Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility |
| title_full | Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility |
| title_fullStr | Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility |
| title_full_unstemmed | Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility |
| title_short | Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility |
| title_sort | al rich algan channel high electron mobility transistors on silicon a relevant approach for high temperature stability of electron mobility |
| topic | AlGaN channel high electron mobility transistor electron mobility silicon substrate temperature operation ultrawide bandgap |
| url | https://doi.org/10.1002/aelm.202400069 |
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