Bassaler, J., Mehta, J., Abid, I., Konczewicz, L., Juillaguet, S., Contreras, S., . . . Ferrandis, P. Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility. Wiley-VCH.
Chicago Style (17th ed.) CitationBassaler, Julien, et al. Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility. Wiley-VCH.
MLA (9th ed.) CitationBassaler, Julien, et al. Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility. Wiley-VCH.
Warning: These citations may not always be 100% accurate.