Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer

Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer

The nanocrystalline silicon-germanium (nc-SiGe) thin films were deposited by high-frequency (27.12 MHz) plasma-enhanced chemical vapor deposition (HF-PECVD). The films were used in a silicon-based thin film solar cell with graded-dead absorption layer. The characterization of the nc-SiGe films are a...

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Bibliographic Details
Main Authors: Chao-Chun Wang, Dong-Sing Wuu, Shui-Yang Lien, Yang-Shih Lin, Chueh-Yang Liu, Chia-Hsum Hsu, Chia-Fu Chen
Format: Article
Language:English
Published: Wiley 2012-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2012/890284
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