Weight-Update Characteristics Dependent on Carrier Densities of Hf-ZnO Charge-Trap Layers in Sub-Threshold Synaptic Transistors

Weight-Update Characteristics Dependent on Carrier Densities of Hf-ZnO Charge-Trap Layers in Sub-Threshold Synaptic Transistors

We present a study on a weight-update characteristics dependent on electron densities of Hf-ZnO charge-trap layers (CTLs) in a low-power synaptic thin-film transistor (Syn-TFT) operating in the sub-threshold region. For a memory function of Syn-TFTs, electrons in the Hf-ZnO CTL are de-trapped toward...

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Bibliographic Details
Main Authors: Kunhee Tae, Danyoung Cha, Gyoungyeop do, Nayeong Lee, Sungsik Lee
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Access
Subjects:
Carrier density
charge-trap layer
dynamic ratio
hafnium-doped zinc oxide
maximum static-power consumption
relaxation time
Online Access:https://ieeexplore.ieee.org/document/10767843/
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https://ieeexplore.ieee.org/document/10767843/

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