Influence of Shape Anisotropy on Magnetization Dynamics Driven by Spin Hall Effect
As the lateral dimension of spin Hall effect based magnetic random-access memory (SHE-RAM) devices is scaled down, shape anisotropy has varied influence on both the magnetic field and the current-driven switching characteristics. In this paper, we study such influences on elliptic film nanomagnets a...
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| Main Authors: | X. G. Li, Z. J. Liu, X. Y. Xie, A. G. Kang, W. N. Fu |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2016-01-01
|
| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2016/4259846 |
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