Oxygen reservoir effect of Tungsten trioxide electrode on endurance performance of ferroelectric capacitors for FeRAM applications
Abstract The effect of W and WO3 electrodes on the ferroelectric characteristics of HZO (Zr-doped HfO2)-based MFM (metal-ferroelectric-metal) capacitors was investigated. During the deposition of tungsten, the W electrode was formed using only Ar gas, while the WO3 electrode was formed using a mixtu...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2024-11-01
|
| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-024-80523-x |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1846158498139734016 |
|---|---|
| author | Yejoo Choi Jaemin Shin Jinhong Min Seungjun Moon Daeyoung Chu Donghwan Han Changhwan Shin |
| author_facet | Yejoo Choi Jaemin Shin Jinhong Min Seungjun Moon Daeyoung Chu Donghwan Han Changhwan Shin |
| author_sort | Yejoo Choi |
| collection | DOAJ |
| description | Abstract The effect of W and WO3 electrodes on the ferroelectric characteristics of HZO (Zr-doped HfO2)-based MFM (metal-ferroelectric-metal) capacitors was investigated. During the deposition of tungsten, the W electrode was formed using only Ar gas, while the WO3 electrode was formed using a mixture of Ar and O2 gases. The W-based MFM capacitors exhibited superior remnant polarization (2Pr of 107.9 µC/cm2 at 700 oC) compared to the WO3-based capacitors; however, their endurance performance was degraded. In contrast, the WO3-based capacitors showed endurance performance enhanced by three orders of magnitude due to the oxygen-rich reservoir effect. The oxygen introduced during the deposition of WO3 prevented the oxygen scavenging effect of tungsten. Consequently, excessive generation of oxygen vacancies in the HZO layer was suppressed, resulting in improved endurance performance. These results were quantitatively confirmed through TEM, XPS, and XRD analyses. |
| format | Article |
| id | doaj-art-02df6876f15347f4bb2e01541ac0fe8d |
| institution | Kabale University |
| issn | 2045-2322 |
| language | English |
| publishDate | 2024-11-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj-art-02df6876f15347f4bb2e01541ac0fe8d2024-11-24T12:24:32ZengNature PortfolioScientific Reports2045-23222024-11-011411810.1038/s41598-024-80523-xOxygen reservoir effect of Tungsten trioxide electrode on endurance performance of ferroelectric capacitors for FeRAM applicationsYejoo Choi0Jaemin Shin1Jinhong Min2Seungjun Moon3Daeyoung Chu4Donghwan Han5Changhwan Shin6Department of Electrical and Computer Engineering, Sungkyunkwan UniversityDepartment of Electrical Engineering, University of Notre DameDepartment of Materials Science and Engineering, University of MichiganSemiconductor R&D Center, Samsung ElectronicsSemiconductor R&D Center, Samsung ElectronicsSemiconductor R&D Center, Samsung ElectronicsSchool of Electrical Engineering, Korea UniversityAbstract The effect of W and WO3 electrodes on the ferroelectric characteristics of HZO (Zr-doped HfO2)-based MFM (metal-ferroelectric-metal) capacitors was investigated. During the deposition of tungsten, the W electrode was formed using only Ar gas, while the WO3 electrode was formed using a mixture of Ar and O2 gases. The W-based MFM capacitors exhibited superior remnant polarization (2Pr of 107.9 µC/cm2 at 700 oC) compared to the WO3-based capacitors; however, their endurance performance was degraded. In contrast, the WO3-based capacitors showed endurance performance enhanced by three orders of magnitude due to the oxygen-rich reservoir effect. The oxygen introduced during the deposition of WO3 prevented the oxygen scavenging effect of tungsten. Consequently, excessive generation of oxygen vacancies in the HZO layer was suppressed, resulting in improved endurance performance. These results were quantitatively confirmed through TEM, XPS, and XRD analyses.https://doi.org/10.1038/s41598-024-80523-x |
| spellingShingle | Yejoo Choi Jaemin Shin Jinhong Min Seungjun Moon Daeyoung Chu Donghwan Han Changhwan Shin Oxygen reservoir effect of Tungsten trioxide electrode on endurance performance of ferroelectric capacitors for FeRAM applications Scientific Reports |
| title | Oxygen reservoir effect of Tungsten trioxide electrode on endurance performance of ferroelectric capacitors for FeRAM applications |
| title_full | Oxygen reservoir effect of Tungsten trioxide electrode on endurance performance of ferroelectric capacitors for FeRAM applications |
| title_fullStr | Oxygen reservoir effect of Tungsten trioxide electrode on endurance performance of ferroelectric capacitors for FeRAM applications |
| title_full_unstemmed | Oxygen reservoir effect of Tungsten trioxide electrode on endurance performance of ferroelectric capacitors for FeRAM applications |
| title_short | Oxygen reservoir effect of Tungsten trioxide electrode on endurance performance of ferroelectric capacitors for FeRAM applications |
| title_sort | oxygen reservoir effect of tungsten trioxide electrode on endurance performance of ferroelectric capacitors for feram applications |
| url | https://doi.org/10.1038/s41598-024-80523-x |
| work_keys_str_mv | AT yejoochoi oxygenreservoireffectoftungstentrioxideelectrodeonenduranceperformanceofferroelectriccapacitorsforferamapplications AT jaeminshin oxygenreservoireffectoftungstentrioxideelectrodeonenduranceperformanceofferroelectriccapacitorsforferamapplications AT jinhongmin oxygenreservoireffectoftungstentrioxideelectrodeonenduranceperformanceofferroelectriccapacitorsforferamapplications AT seungjunmoon oxygenreservoireffectoftungstentrioxideelectrodeonenduranceperformanceofferroelectriccapacitorsforferamapplications AT daeyoungchu oxygenreservoireffectoftungstentrioxideelectrodeonenduranceperformanceofferroelectriccapacitorsforferamapplications AT donghwanhan oxygenreservoireffectoftungstentrioxideelectrodeonenduranceperformanceofferroelectriccapacitorsforferamapplications AT changhwanshin oxygenreservoireffectoftungstentrioxideelectrodeonenduranceperformanceofferroelectriccapacitorsforferamapplications |