Sulfur-locked multiple resonance emitters for high performance orange-red/deep-red OLEDs
Abstract Multiple resonance thermally activated delayed fluorescence (MR-TADF) materials are preferred for their high efficiency and high colour purity in organic light-emitting diodes (OLEDs). However, the design strategies of MR-TADF emitters in the red region are very limited. Herein, we propose...
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| Format: | Article |
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Nature Portfolio
2025-01-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-024-55680-2 |
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| author | Yexuan Pu Qian Jin Yuewei Zhang Chenglong Li Lian Duan Yue Wang |
| author_facet | Yexuan Pu Qian Jin Yuewei Zhang Chenglong Li Lian Duan Yue Wang |
| author_sort | Yexuan Pu |
| collection | DOAJ |
| description | Abstract Multiple resonance thermally activated delayed fluorescence (MR-TADF) materials are preferred for their high efficiency and high colour purity in organic light-emitting diodes (OLEDs). However, the design strategies of MR-TADF emitters in the red region are very limited. Herein, we propose a concept for a paradigm shift in orange-red/deep-red MR emitters by linking the outer phenyl groups in a classical MR framework through intramolecular sulfur (S) locks. Endowed with the planar architectural feature of the MR mother core, the proof-of-concept S-embedded emitters S-BN and 2S-BN also exhibit considerable flatness, which proves critical in avoiding the direct establishment of potent charge transfer states and inhibiting the non-radiative decay process. The emission maxima of S-BN and 2S-BN are 594 nm and 671 nm, respectively, and both have a high photoluminescence quantum yield of ~100%, a rapid radiative decay rate of around 107 s−1, and a remarkably high reverse intersystem crossing rates of about 105 s−1. Notably, maximum external quantum efficiencies of 39.9% (S-BN, orange-red) and 29.3% (2S-BN, deep-red) were also achieved in typical planar OLED structures with ameliorated efficiency roll-offs. |
| format | Article |
| id | doaj-art-01333c937053487f8814f54256cda8ea |
| institution | Kabale University |
| issn | 2041-1723 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-01333c937053487f8814f54256cda8ea2025-01-05T12:39:12ZengNature PortfolioNature Communications2041-17232025-01-0116111010.1038/s41467-024-55680-2Sulfur-locked multiple resonance emitters for high performance orange-red/deep-red OLEDsYexuan Pu0Qian Jin1Yuewei Zhang2Chenglong Li3Lian Duan4Yue Wang5State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin UniversityKey Lab of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua UniversityLaboratory of Flexible Electronics Technology, Tsinghua UniversityState Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin UniversityKey Lab of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua UniversityState Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin UniversityAbstract Multiple resonance thermally activated delayed fluorescence (MR-TADF) materials are preferred for their high efficiency and high colour purity in organic light-emitting diodes (OLEDs). However, the design strategies of MR-TADF emitters in the red region are very limited. Herein, we propose a concept for a paradigm shift in orange-red/deep-red MR emitters by linking the outer phenyl groups in a classical MR framework through intramolecular sulfur (S) locks. Endowed with the planar architectural feature of the MR mother core, the proof-of-concept S-embedded emitters S-BN and 2S-BN also exhibit considerable flatness, which proves critical in avoiding the direct establishment of potent charge transfer states and inhibiting the non-radiative decay process. The emission maxima of S-BN and 2S-BN are 594 nm and 671 nm, respectively, and both have a high photoluminescence quantum yield of ~100%, a rapid radiative decay rate of around 107 s−1, and a remarkably high reverse intersystem crossing rates of about 105 s−1. Notably, maximum external quantum efficiencies of 39.9% (S-BN, orange-red) and 29.3% (2S-BN, deep-red) were also achieved in typical planar OLED structures with ameliorated efficiency roll-offs.https://doi.org/10.1038/s41467-024-55680-2 |
| spellingShingle | Yexuan Pu Qian Jin Yuewei Zhang Chenglong Li Lian Duan Yue Wang Sulfur-locked multiple resonance emitters for high performance orange-red/deep-red OLEDs Nature Communications |
| title | Sulfur-locked multiple resonance emitters for high performance orange-red/deep-red OLEDs |
| title_full | Sulfur-locked multiple resonance emitters for high performance orange-red/deep-red OLEDs |
| title_fullStr | Sulfur-locked multiple resonance emitters for high performance orange-red/deep-red OLEDs |
| title_full_unstemmed | Sulfur-locked multiple resonance emitters for high performance orange-red/deep-red OLEDs |
| title_short | Sulfur-locked multiple resonance emitters for high performance orange-red/deep-red OLEDs |
| title_sort | sulfur locked multiple resonance emitters for high performance orange red deep red oleds |
| url | https://doi.org/10.1038/s41467-024-55680-2 |
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