Gate Failure Behavior and Mechanism of AlGaN/GaN HEMTs Under Transmission Line Pulsed Stress by Y. Ren, Y. Q. Chen, C. Liu, X. B. Xu, R. Gao, D. Y. Lei, P. Lai, Y. Huang, J. He

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Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress by X. B. Xu, B. Li, Y. Q. Chen, Z. H. Wu, Z. Y. He, L. Liu, S. Z. He, Y. F. En, Y. Huang

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Trap Analysis Based on Low-Frequency Noise for SiC Power MOSFETs Under Repetitive Short-Circuit Stress by J. L. Wang, Y. Q. Chen, J. T. Feng, X. B. Xu, Y. F. En, B. Hou, R. Gao, Y. Chen, Y. Huang, K. W. Geng

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