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    Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models

    Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models by Michael I. Current, Takuya Sakaguchi, Yoji Kawasaki, Viktor Samu, Anita Pongracz, Luca Sinko, Arpad Kerekes, Zsolt Durko

    Published 2024-01-01
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