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    Author Correction: Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition

    Author Correction: Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition by Arun Kumar Dhasiyan, Frank Wilson Amalraj, Swathy Jayaprasad, Naohiro Shimizu, Osamu Oda, Kenji Ishikawa, Masaru Hori

    Published 2024-12-01
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  2. 2
    Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition

    Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition by Arun Kumar Dhasiyan, Frank Wilson Amalraj, Swathy Jayaprasad, Naohiro Shimizu, Osamu Oda, Kenji Ishikawa, Masaru Hori

    Published 2024-05-01
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