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    Demonstration of high Johnson’s figure of merit (ft × VBR >20 THz·V) and fmax × VBR (>42 THz·V) for Al0.66Ga0.34N channel MISHEMT on bulk AlN substrates

    Demonstration of high Johnson’s figure of merit (ft × VBR >20 THz·V) and fmax × VBR (>42 THz·V) for Al0.66Ga0.34N channel MISHEMT on bulk AlN substrates by Ruixin Bai, Swarnav Mukhopadhyay, Khush Gohel, Surjava Sanyal, Jiahao Chen, MD Tahmidul Alam, Shuwen Xie, Shubhra S. Pasayat, Chirag Gupta

    Published 2025-01-01
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