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    Direct Extraction Methods for RF Characterization of Extrinsic Parasitic Parameters in 28 nm FDSOI MOSFETs Up to 110 GHz

    Direct Extraction Methods for RF Characterization of Extrinsic Parasitic Parameters in 28 nm FDSOI MOSFETs Up to 110 GHz by Xuejing Yang, Kyounghoon Yang

    Published 2024-01-01
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