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    Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN high-electron-mobility transistors for X-band applications

    Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN high-electron-mobility transistors for X-band applications by Sung-Jae Chang, Hyeon-Seok Jeong, Hyun-Wook Jung, Su-Min Choi, Il-Gyu Choi, Youn-Sub Noh, Seong-Il Kim, Sang-Heung Lee, Ho-Kyun Ahn, Dong Min Kang, Dae-Hyun Kim, Jong-Won Lim

    Published 2024-12-01
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