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    Cation composition ratio and channel length effects on bias stress instability in amorphous InGaZnO back-end-of-line field-effect transistors

    Cation composition ratio and channel length effects on bias stress instability in amorphous InGaZnO back-end-of-line field-effect transistors by Donguk Kim, Dayeon Lee, Wonjung Kim, Ho Jung Lee, Changwook Kim, Kwang-Hee Lee, Moonil Jung, Jee-Eun Yang, Younjin Jang, Sungjun Kim, Sangwook Kim, Dae Hwan Kim

    Published 2024-12-01
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