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Numerical modeling of the electronic structure of Si-doped n-type GaAs/AlGaAs double quantum wells under hydrostatic pressure and temperature variations by M. Jaouane, R. Arraoui, A. Ed-Dahmouny, H. M. Althib, A. Alkhaldi, A. Fakkahi, H. Azmi, K. El-Bakkari, H. El Ghazi, A. Sali
Published 2025-08-01Get full text
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