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    Physical Model Development for Fabricating MIS‐Anode‐Based 1100 V AlGaN/GaN‐Based Lateral Schottky Barrier Diodes Grown on Silicon Substrate with Low Leakage Current

    Physical Model Development for Fabricating MIS‐Anode‐Based 1100 V AlGaN/GaN‐Based Lateral Schottky Barrier Diodes Grown on Silicon Substrate with Low Leakage Current by Jingting He, Zhizhong Wang, Fuping Huang, Chunshuang Chu, Kangkai Tian, Shuting Cai, Yonghui Zhang, Xiaojuan Sun, Dabing Li, Xiaowei Sun, Zi‐Hui Zhang

    Published 2025-08-01
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