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    High-temperature Reliability of 1 200 V SiC Power MOSFETs

    High-temperature Reliability of 1 200 V SiC Power MOSFETs by DENG Xiaochuan, CHEN Xixi, WANG Yiyu, SHEN Huajun, TANG Yachao, GAO Yunbing

    Published 2016-01-01
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