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A comparative study of Schottky barrier heights and charge transport mechanisms in 3C, 4H, and 6H silicon carbide polytypes by Fayssal Mekaret, Abdelaziz Rabehi, Baya Zebentout, Shahrazade Tizi, Abdelmalek Douara, Stefano Bellucci, Mawloud Guermoui, Zineb Benamara, El-Sayed M. El-kenawy, Marwa M. Eid, Amel Ali Alhussan
Published 2024-11-01Get full text
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